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- دیتاشیت NJVMJD350T4G
NJVMJD350T4G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | NJVMJD350T4G |
|---|---|
| حجم فایل | 82.739 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 7 |
دانلود دیتاشیت NJVMJD350T4G |
دانلود دیتاشیت |
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سایر مستندات
MJD3x0,NJVMJD3x0T4G 6 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi NJVMJD350T4G
- Transistor Type: PNP
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 500mA
- Power Dissipation (Pd): 1.56W
- Transition Frequency (fT): 10MHz
- DC Current Gain (hFE@Ic,Vce): 30@50mA,10V
- Collector Cut-Off Current (Icbo): 100uA
- Collector-Emitter Breakdown Voltage (Vceo): 300V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@10mA,100mA
- Package: TO-252
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Power - Max: 1.56W
- Frequency - Transition: 10MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Base Part Number: NJVMJD350
- detail: Bipolar (BJT) Transistor PNP 300V 500mA 10MHz 1.56W Surface Mount DPAK